The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 12, 2014
Filed:
Oct. 30, 2013
Renesas Electronics Corporation, Kawasaki, JP;
Yoshihisa Matsubara, Kanagawa, JP;
Renesas Electronics Corporation, Kawasaki-Shi, Kanagawa, JP;
Abstract
A method for manufacturing a semiconductor device includes forming a first interconnect over the semiconductor substrate; forming an interlayer dielectric film over the first interconnect; forming a hole in the interlayer dielectric film such that the hole reaches the first interconnect; forming a trench in the interlayer dielectric film; and embedded a conductive film in the hole and the trench, thereby a via is formed in the hole and a second interconnect in the trench, wherein, in a planar view, the first interconnect extends in a first direction, wherein, in a planar view, the second interconnect extends in a second direction which is perpendicular to the first direction, and wherein a maximum width of the via in the second direction is larger than a maximum width of the via in the first direction.