The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 30, 2018

Filed:

Oct. 31, 2017
Applicant:

Renesas Electronics Corporation, Tokyo, JP;

Inventor:

Yoshihisa Matsubara, Ibaraki, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/29 (2006.01); H01L 23/373 (2006.01); H01L 21/56 (2006.01); H01L 23/31 (2006.01); H01L 23/00 (2006.01); H01L 23/433 (2006.01);
U.S. Cl.
CPC ...
H01L 23/3733 (2013.01); H01L 21/565 (2013.01); H01L 23/295 (2013.01); H01L 23/3128 (2013.01); H01L 24/29 (2013.01); H01L 23/373 (2013.01); H01L 23/4334 (2013.01); H01L 24/11 (2013.01); H01L 24/13 (2013.01); H01L 24/16 (2013.01); H01L 24/32 (2013.01); H01L 24/45 (2013.01); H01L 24/73 (2013.01); H01L 24/83 (2013.01); H01L 24/92 (2013.01); H01L 2224/04042 (2013.01); H01L 2224/1134 (2013.01); H01L 2224/13144 (2013.01); H01L 2224/16225 (2013.01); H01L 2224/16227 (2013.01); H01L 2224/2919 (2013.01); H01L 2224/2929 (2013.01); H01L 2224/29393 (2013.01); H01L 2224/29499 (2013.01); H01L 2224/32225 (2013.01); H01L 2224/45124 (2013.01); H01L 2224/45144 (2013.01); H01L 2224/45147 (2013.01); H01L 2224/45565 (2013.01); H01L 2224/45686 (2013.01); H01L 2224/45687 (2013.01); H01L 2224/48091 (2013.01); H01L 2224/48227 (2013.01); H01L 2224/48247 (2013.01); H01L 2224/48465 (2013.01); H01L 2224/73204 (2013.01); H01L 2224/73253 (2013.01); H01L 2224/73265 (2013.01); H01L 2224/81 (2013.01); H01L 2224/83 (2013.01); H01L 2224/83855 (2013.01); H01L 2224/85 (2013.01); H01L 2224/92125 (2013.01); H01L 2224/92247 (2013.01); H01L 2224/97 (2013.01); H01L 2924/00012 (2013.01); H01L 2924/00014 (2013.01); H01L 2924/15311 (2013.01); H01L 2924/181 (2013.01);
Abstract

Performance of a semiconductor device is improved. Graphene particles are mixedly added in a sealing resin covering a semiconductor chip. The graphene particles are thus mixedly added in the sealing resin, thereby thermal conduction of the sealing resin is improved, and thus radiation performance of the semiconductor device can be improved. Graphene is a sheet of spbonded carbon atoms having a monolayer thickness. Graphene has a structure where hexagonal lattices, each of which is formed of carbon atoms and bonds of the carbon atoms, are planarly spread. Graphene is preferably used as heat transfer filler because of its high thermal conductivity and light weight.


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