The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 05, 2012
Filed:
Jul. 02, 2009
Applicant:
Yoshihisa Matsubara, Kanagawa, JP;
Inventor:
Yoshihisa Matsubara, Kanagawa, JP;
Assignee:
Renesas Electronics Corporation, Kawasaki-shi, Kanagawa, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/088 (2006.01); H01L 21/8242 (2006.01);
U.S. Cl.
CPC ...
Abstract
A semiconductor device, including: a first transistor formed on a substrate and including an Hf contained film as its gate insulating film; and a second transistor formed on said substrate and having the same conductive type as that of said first transistor, said second transistor including a silicon oxide film and not including an Hf contained film as its gate insulating film is provided.