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Yoshihiko Kanzawa

USPTO Granted Patents = 45 (Patent Applications = 2)

EPO Patents = 2

Average Co-Inventor Count = 4.5

ph-index = 13

Forward Citations = 533(Granted Patents)

Location History:

Kadoma, JP (2003 - 2005)
Yawata, JP (2005 - 2010)
Kyoto, JP (2011 - 2013)
Osaka, JP (2002 - 2015)

Company Filing History:

26 out of 16,453

Panasonic Corporation

17 out of 27,375

Matsushita Electric Industrial Co., Ltd.

2 out of 13,307

Panasonic Intellectual Property Management Co., Ltd.

Years Active: 2002-2015

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Areas of Expertise:

Nonvolatile Memory Device

Variable Resistance Memory

Semiconductor Fabrication

Heterojunction Bipolar Transistor

FINFET Semiconductor

Oxygen-Deficient Oxide Layer

Resistance Variable Element

Semiconductor Crystal Production

Memory Cell Formation

Thin Platinum Electrode

Strained Channel FinFET

Semiconductor Wafer Manufacturing

45 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 9183926 - Method for driving nonvolatile storage element, and nonvolatile storage device (2015-11-10),

2. 9142292 - Method for reading data from nonvolatile storage element, and nonvolatile storage device (2015-09-22),

3. 8830730 - Variable resistance nonvolatile storage device and method of forming memory cell (2014-09-09),

4. 8675387 - Variable resistance nonvolatile memory device and programming method for same (2014-03-18),

5. 8619460 - Nonvolatile memory device and method for programming nonvolatile memory element (2013-12-31),

6. 8565005 - Nonvolatile memory element and nonvolatile memory device (2013-10-22),

7. 8553446 - Nonvolatile memory element, manufacturing method thereof, and nonvolatile semiconductor device incorporating nonvolatile memory element (2013-10-08),

8. 8553444 - Variable resistance nonvolatile storage device and method of forming memory cell (2013-10-08),

9. 8486788 - Semiconductor device and method for fabricating the same (2013-07-16),

10. 8472238 - Variable resistance nonvolatile storage device with oxygen-deficient oxide layer and asymmetric substrate bias effect (2013-06-25),

11. 8445885 - Nonvolatile memory element having a thin platinum containing electrode (2013-05-21),

12. 8445319 - Nonvolatile memory element, manufacturing method thereof, and nonvolatile semiconductor apparatus using the nonvolatile memory element (2013-05-21),

13. 8441837 - Variable resistance nonvolatile memory device (2013-05-14),

14. 8391051 - Method of programming nonvolatile memory element (2013-03-05),

15. 8338816 - Nonvolatile memory element, and nonvolatile semiconductor device using the nonvolatile memory element (2012-12-25),

Title: Yoshihiko Kanzawa: Pioneering Inventor from Osaka

Introduction: Yoshihiko Kanzawa is a renowned inventor hailing from Osaka, Japan, known for his groundbreaking contributions to the field of technology and innovation.

Latest Patents: Kanzawa's latest patents focus on advancements in robotics and artificial intelligence, showcasing his commitment to pushing the boundaries of technological development.

Career Highlights: With a career spanning over two decades, Kanzawa has established himself as a leading figure in the tech industry, with numerous successful inventions that have revolutionized various sectors.

Collaborations: Throughout his career, Kanzawa has collaborated with top research institutions and leading tech companies to bring his innovative ideas to life, further solidifying his reputation as a visionary inventor.

Conclusion: Yoshihiko Kanzawa's relentless pursuit of innovation and his passion for creating cutting-edge technologies have cemented his legacy as a pioneering inventor in the global tech landscape.

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