The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 21, 2013
Filed:
Dec. 01, 2009
Yoshihiko Kanzawa, Osaka, JP;
Satoru Mitani, Osaka, JP;
Zhiqiang Wei, Osaka, JP;
Takeshi Takagi, Kyoto, JP;
Koji Katayama, Nara, JP;
Yoshihiko Kanzawa, Osaka, JP;
Satoru Mitani, Osaka, JP;
Zhiqiang Wei, Osaka, JP;
Takeshi Takagi, Kyoto, JP;
Koji Katayama, Nara, JP;
Panasonic Corporation, Osaka, JP;
Abstract
A nonvolatile memory element includes first and second electrodes, and a resistance variable layer disposed therebetween. At least one of the first and second electrodes includes a platinum-containing layer. The resistance variable layer includes a first oxygen-deficient transition metal oxide layer which is not physically in contact with the platinum-containing layer and a second oxygen-deficient transition metal oxide layer which is disposed between the first oxygen-deficient transition metal oxide layer and the platinum-containing layer and is physically in contact with the platinum-containing layer. When oxygen-deficient transition metal oxides included in the first and second oxygen-deficient transition metal oxide layers are expressed as MO, and MO, respectively, x<y is satisfied. The platinum-containing layer has a thickness which is not less than 1 nm and not more than 23 nm.