The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 05, 2013
Filed:
Apr. 09, 2010
Yoshihiko Kanzawa, Osaka, JP;
Takeshi Takagi, Kyoto, JP;
Yoshihiko Kanzawa, Osaka, JP;
Takeshi Takagi, Kyoto, JP;
Panasonic Corporation, Osaka, JP;
Abstract
Provided is a programming method for improving the retention characteristics of information in a variable resistance nonvolatile memory element. The method includes: a first writing process of applying a first voltage Vhaving a first polarity to set the variable resistance nonvolatile storage element to a low resistance state LR indicating first logic information (S); a second writing process of applying a second voltage Vhaving a second polarity different from the first polarity to set the variable resistance nonvolatile storage element to a first high resistance state HR(S); and a partial write process of applying a third voltage Vhaving the first polarity so as to set the variable resistance layer to a second high resistance state HRindicating second logic information different from the first logic information (S). Here, |V|<|V|, and resistance values in HR, HR, LR are greater in this order.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile