The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 22, 2013
Filed:
Aug. 30, 2012
Takeshi Takagi, Kyoto, JP;
Zhiqiang Wei, Osaka, JP;
Takeki Ninomiya, Osaka, JP;
Shunsaku Muraoka, Osaka, JP;
Yoshihiko Kanzawa, Osaka, JP;
Takeshi Takagi, Kyoto, JP;
Zhiqiang Wei, Osaka, JP;
Takeki Ninomiya, Osaka, JP;
Shunsaku Muraoka, Osaka, JP;
Yoshihiko Kanzawa, Osaka, JP;
Panasonic Corporation, Osaka, JP;
Abstract
A nonvolatile memory element includes: a first electrode layer; a second electrode layer; and a variable resistance layer which is placed between the electrode layers, and whose resistance state reversibly changes between a high resistance state and a low resistance state based on a polarity of a voltage applied between the electrode layers. The variable resistance layer is formed by stacking a first oxide layer including an oxide of a first transition metal and a second oxide layer including an oxide of a second transition metal which is different from the first transition metal. At least one of the following conditions is satisfied: (1) a dielectric constant of the second oxide layer is larger than a dielectric constant of the first oxide layer; and (2) a band gap of the second oxide layer is smaller than a band gap of the first oxide layer.