The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 31, 2013
Filed:
Oct. 26, 2011
Yoshihiko Kanzawa, Osaka, JP;
Takeshi Takagi, Kyoto, JP;
Yoshihiko Kanzawa, Osaka, JP;
Takeshi Takagi, Kyoto, JP;
Panasonic Corporation, Osaka, JP;
Abstract
A nonvolatile memory device () includes a variable resistance nonvolatile memory element () and a control circuit (). The control circuit () determines whether a resistance value of the nonvolatile memory element () in a high resistance state is equal to or greater than a predetermined threshold value. Moreover, if the resistance value of the nonvolatile memory element () in the high resistance state is smaller than the threshold value, the control circuit () applies a first voltage (VL) to the nonvolatile memory element () to change a resistance state of the nonvolatile memory element () from the high resistance state to the low resistance state. Moreover, if the resistance value of the nonvolatile memory element () in the high resistance state is equal to or greater than the threshold value, the control circuit () applies to the nonvolatile memory element () a second voltage (VL) an absolute value of which is smaller an absolute value of the first voltage (VL) to change the resistance state of the nonvolatile memory element () from the high resistance state to the low resistance state.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile