The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 25, 2012

Filed:

Mar. 31, 2008
Applicants:

Yoshihiko Kanzawa, Osaka, JP;

Shunsaku Muraoka, Osaka, JP;

Satoru Mitani, Osaka, JP;

Zhiqiang Wei, Osaka, JP;

Takeshi Takagi, Kyoto, JP;

Inventors:

Yoshihiko Kanzawa, Osaka, JP;

Shunsaku Muraoka, Osaka, JP;

Satoru Mitani, Osaka, JP;

Zhiqiang Wei, Osaka, JP;

Takeshi Takagi, Kyoto, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 47/00 (2006.01); H01L 29/02 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
Abstract

A nonvolatile memory element of the present invention comprises a first electrode (); a second electrode (); and a resistance variable layer () which is disposed between the first electrode () and the second electrode (), a resistance value of the resistance variable layer being changeable in response to electric signals which are applied between the first electrode () and the second electrode (), wherein the first electrode and the second electrode comprise materials which are made of different elements.


Find Patent Forward Citations

Kanzawa, Yoshihiko. (2012). Nonvolatile memory element, and nonvolatile semiconductor device using the nonvolatile memory element (U.S. Patent No. 8338816). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8338816

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