The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 25, 2013
Filed:
Jun. 27, 2012
Kazuhiko Shimakawa, Osaka, JP;
Yoshihiko Kanzawa, Osaka, JP;
Satoru Mitani, Osaka, JP;
Shunsaku Muraoka, Osaka, JP;
Kazuhiko Shimakawa, Osaka, JP;
Yoshihiko Kanzawa, Osaka, JP;
Satoru Mitani, Osaka, JP;
Shunsaku Muraoka, Osaka, JP;
Panasonic Corporation, Osaka, JP;
Abstract
The variable resistance nonvolatile storage device includes a memory cell () that is formed by connecting in series a variable resistance element () including a variable resistance layer () which reversibly changes based on electrical signals each having a different polarity and a transistor () including a semiconductor substrate () and two N-type diffusion layer regions (), wherein the variable resistance layer () includes an oxygen-deficient oxide of a transition metal, lower and upper electrodes () are made of materials of different elements, a standard electrode potential Vof the lower electrode (), a standard electrode potential Vof the upper electrode (), and a standard electrode potential Vof the transition metal satisfy V<Vand V<V, and the lower electrode () is connected with the N-type diffusion layer region (), the electrical signals being applied between the lower and upper electrodes ().