The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 14, 2013
Filed:
Apr. 14, 2010
Yuuichirou Ikeda, Hyogo, JP;
Kazuhiko Shimakawa, Osaka, JP;
Yoshihiko Kanzawa, Osaka, JP;
Shunsaku Muraoka, Osaka, JP;
Ryotaro Azuma, Osaka, JP;
Yuuichirou Ikeda, Hyogo, JP;
Kazuhiko Shimakawa, Osaka, JP;
Yoshihiko Kanzawa, Osaka, JP;
Shunsaku Muraoka, Osaka, JP;
Ryotaro Azuma, Osaka, JP;
Panasonic Corporation, Osaka, JP;
Abstract
A nonvolatile resistance variable memory device () includes memory cells (M, M, . . . ) in each of which a variable resistance element (R, R, . . . ) including a variable resistance layer placed between and in contact with a first electrode and a second electrode, and a current steering element (D, D, . . . ) including a current steering layer placed between and in contact with a third electrode and a fourth electrode, are connected in series, and the device is driven by a first LR drive circuit () via a current limit circuit () to decrease resistance of the variable resistance element while the device is driven by a second HR drive circuit () to increase resistance of the variable resistance element, thus using the current limit circuit () to make a current for decreasing resistance of the variable resistance element lower than a current for increasing resistance of the variable resistance element.