The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 22, 2015
Filed:
Jan. 31, 2012
Yoshihiko Kanzawa, Osaka, JP;
Takeshi Takagi, Kyoto, JP;
Yoshihiko Kanzawa, Osaka, JP;
Takeshi Takagi, Kyoto, JP;
Abstract
Provided is a method for reading data from a variable resistance nonvolatile storage element, where the operation for reading data is less susceptible to a fluctuation phenomenon of resistance values in reading the data. The method includes: detecting a current value Ithat flows through the nonvolatile storage element that can be in a low resistance state RL and a high resistance state RH, with application of a fixed voltage; and determining that (i) the nonvolatile storage element is in a high resistance state when the current value Idetected in the detecting is smaller than a current reference level Iref, and (ii) the nonvolatile storage element is in a low resistance state when the current value Idetected in the detecting is larger than the reference level Iref, the current reference level Iref being defined by (IRL+IRH)/2<Iref<IRL.