logo

For the Inventor, By the Inventor

Suwon, South Korea

Yoo-Sang Hwang

This inventor holds 74 USPTO granted patents and 4 published patent applications, primarily in Semiconductor Devices (CPC class H01L). Top assignee: Samsung Electronics Co., Ltd.. Active years: 2001-2022.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Yoo-Sang Hwang. Retrieved from https://idiyas.com/inventor/yoo-sang-hwang

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 74 

% Patents Active = 86.5

Average Co-Inventor Count = 3.5

ph-index = 12

Forward Citations = 437(Granted Patents)

Forward Citations (Not Self Cited) = 407(Dec 10, 2025)


Inventors with similar research interests:


Location History:

  • Yongin-shi, KR (2001)
  • Suwon, KR (2002 - 2004)
  • Seoul, KR (2004)
  • Kyunggi-do, KR (2001 - 2005)
  • Kyungki-do, KR (2005 - 2006)
  • Gyeonggi-do, KR (2005 - 2013)
  • Suwon-si, KR (2007 - 2022)

Company Filing History:

goldMedal74 out of 132,108 
 
Samsung Electronics Co., Ltd.
 patents

Years Active: 2001-2022

Loading Chart...
Areas of Expertise:
Integrated Circuit
Semiconductor
Memory Device
2D Material
Vertical Channel Transistor
Bit Line
Air Gap Spacer
Conductive Plug
Magnetoresistive RAM
Dielectric Structure
Active Patterns
Buried Contacts
74 patents (USPTO):Explore Patents
1. 11482285 - Integrated circuit devices and methods of manufacturing same (2022-10-25),
2. 11417665 - Semiconductor devices (2022-08-16),
3. 11251307 - Device comprising 2D material (2022-02-15),
4. 11152369 - Method of forming an integrated circuit device including a lower electrode on a sidewall of a support column extending vertical on a top surface of a substrate, a dielectric layer surrounding the support column and the lower electrode, and an upper electrode surrounding the dielectric layer (2021-10-19),
5. 10886167 - Semiconductor device for improving device characteristics (2021-01-05),
6. 10818671 - Semiconductor devices (2020-10-27),
7. 10777276 - Integrated circuit devices (2020-09-15),
8. 10665498 - Semiconductor device having air gap spacer and method of fabricating the same (2020-05-26),
9. 10629600 - Integrated circuit device including a support pattern, a lower electrode pattern, a dielectric structure, and an upper electrode structure (2020-04-21),
10. 10600646 - Method of fabricating device including two-dimensional material (2020-03-24),
11. 10580876 - Integrated circuit devices (2020-03-03),
12. 10515798 - Method of fabricating device including two-dimensional material (2019-12-24),
13. 10510759 - Semiconductor memory device (2019-12-17),
14. 10468103 - Integrated circuit devices including separate memory cells on separate regions of individual substrate (2019-11-05),
15. 10332831 - Semiconductor device including a bit line (2019-06-25),

Title: Innovative Contributions of Yoo-Sang Hwang in the Semiconductor Industry

Introduction

Yoo-Sang Hwang, a distinguished inventor based in Suwon-si, South Korea, has made significant contributions to the field of semiconductor technology. With an impressive portfolio of 74 patents, Hwang's innovative work plays a crucial role in advancing integrated circuit (IC) devices and semiconductor manufacturing processes.

Latest Patents

Among his latest patents, Hwang has developed groundbreaking technologies in integrated circuit devices and methods of manufacturing them. One notable patent describes an integrated circuit device that comprises a single substrate with multiple memory cells, each possessing unique structural attributes. The manufacturing process involves creating a series of first and second word lines and forming capacitors and source lines. An insulation layer is then applied, along with a variable resistance structure strategically positioned above the substrate.

In addition, Hwang has invented a sophisticated semiconductor device featuring a series of conductive structures that are meticulously arranged on a substrate. These structures are complemented by alternating contact structures and insulation designs, ensuring optimal performance and reliability of the semiconductor devices produced.

Career Highlights

Hwang has spent a significant portion of his career at reputable companies, notably at Samsung Electronics Co., Ltd. and Samsung Electronic Co., Ltd. His work has not only propelled technological advancements but also placed him at the forefront of innovations in semiconductor design and implementation.

Collaborations

Throughout his career, Hwang has collaborated with esteemed individuals in the industry, including Dae-Ik Kim and Bong-Soo Kim. These partnerships have contributed to the successful development of several patented technologies, showcasing the collaborative nature of innovation in the semiconductor field.

Conclusion

Yoo-Sang Hwang's accomplishments in the realm of semiconductor technology underscore his impactful role as an inventor in enhancing integrated circuit devices and manufacturing methods. His portfolio of patents reflects a commitment to innovation, contributing significantly to the evolution of the semiconductor industry. As technology continues to progress, Hwang's innovations will likely remain a cornerstone of advancements in this critical field.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
Loading…