The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 24, 2020
Filed:
Sep. 04, 2018
Applicant:
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Inventors:
Tae-jin Park, Yongin-si, KR;
Bong-soo Kim, Yongin-si, KR;
Jin-bum Kim, Seoul, KR;
Yoo-sang Hwang, Suwon-si, KR;
Assignee:
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); H01L 29/786 (2006.01); H01L 29/66 (2006.01); H01L 29/778 (2006.01); H01L 29/06 (2006.01); H01L 29/423 (2006.01); H01L 29/78 (2006.01); H01L 29/20 (2006.01); H01L 29/16 (2006.01); H01L 29/24 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02568 (2013.01); H01L 21/02587 (2013.01); H01L 29/0665 (2013.01); H01L 29/42384 (2013.01); H01L 29/66045 (2013.01); H01L 29/66969 (2013.01); H01L 29/778 (2013.01); H01L 29/7788 (2013.01); H01L 29/7789 (2013.01); H01L 29/7853 (2013.01); H01L 29/7869 (2013.01); H01L 29/78603 (2013.01); H01L 29/78642 (2013.01); H01L 29/78696 (2013.01); H01L 21/0243 (2013.01); H01L 21/02488 (2013.01); H01L 21/02494 (2013.01); H01L 21/02513 (2013.01); H01L 21/02612 (2013.01); H01L 29/1606 (2013.01); H01L 29/2003 (2013.01); H01L 29/24 (2013.01); H01L 29/4236 (2013.01);
Abstract
A method of fabricating a device including a two-dimensional (2D) material includes forming an amorphous transition metal oxide structure on a substrate and replacing the amorphous transition metal oxide structure by a transition metal dichalcogenide structure. The transition metal dichalcogenide structure includes atomic layers, that are substantially parallel to a surface of the transition metal dichalcogenide structure.