The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 25, 2019
Filed:
Jun. 30, 2017
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-Do, KR;
Augustin Jinwoo Hong, Seoul, KR;
Dae-Ik Kim, Hwaseong-si, KR;
Chan-Sic Yoon, Anyang-si, KR;
Ki-Seok Lee, Hwaseong-si, KR;
Dong-Min Han, Suwon-si, KR;
Sung-Ho Jang, Seoul, KR;
Yoo-Sang Hwang, Suwon-si, KR;
Bong-Soo Kim, Yongin-si, KR;
Je-Min Park, Suwon-si, KR;
SAMSUNG ELECTRONICS CO., LTD., Suwon-si, Gyeonggi-Do, KR;
Abstract
A semiconductor device includes a substrate including a cell array region including a cell active region. An insulating pattern is on the substrate. The insulating pattern includes a direct contact hole which exposes the cell active region and extends into the cell active region. A direct contact conductive pattern is in the direct contact hole and is connected to the cell active region. A bit line is on the insulating pattern. The bit line is connected to the direct contact conductive pattern and extends in a direction orthogonal to an upper surface of the insulating pattern. The insulating pattern includes a first insulating pattern including a non-metal-based dielectric material and a second insulating pattern on the first insulating pattern. The second insulating pattern includes a metal-based dielectric material having a higher dielectric constant than a dielectric constant of the first insulating pattern.