The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 24, 2019
Filed:
Sep. 04, 2018
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Tae-jin Park, Yongin-si, KR;
Bong-soo Kim, Yongin-si, KR;
Jin-bum Kim, Seoul, KR;
Yoo-sang Hwang, Suwon-si, KR;
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Abstract
A method of fabricating a device including a two-dimensional (2D) material includes forming a transition metal oxide pattern on a substrate and forming a transition metal dichalcogenide layer on a top surface and a side surface of a residual portion of the transition metal oxide pattern. The forming the transition metal dichalcogenide layer may include replacing a surface portion of the transition metal oxide pattern with the transition metal dichalcogenide layer. The transition metal dichalcogenide layer includes at least one atomic layer that is substantially parallel to a surface of the residual portion of the transition metal oxide pattern.