The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 17, 2019

Filed:

Jun. 11, 2018
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;

Inventors:

Hui-jung Kim, Seongnam-si, KR;

Bong-soo Kim, Yongin-si, KR;

Sung-hee Han, Hwaseong-si, KR;

Yoo-sang Hwang, Suwon-si, KR;

Assignee:

SAMSUNG ELECTRONICS CO., LTD., Suwon-si, Gyeonggi-Do, KR;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/108 (2006.01); H01L 21/768 (2006.01); H01L 49/02 (2006.01); H01L 21/321 (2006.01); H01L 21/02 (2006.01); H01L 21/311 (2006.01);
U.S. Cl.
CPC ...
H01L 27/10814 (2013.01); H01L 21/76802 (2013.01); H01L 21/76877 (2013.01); H01L 27/10817 (2013.01); H01L 27/10823 (2013.01); H01L 27/10855 (2013.01); H01L 28/90 (2013.01); H01L 21/0217 (2013.01); H01L 21/02274 (2013.01); H01L 21/31111 (2013.01); H01L 21/3212 (2013.01); H01L 27/10876 (2013.01);
Abstract

A semiconductor memory device according to an example embodiment of the present inventive concept may include: a plurality of lower electrodes located on a substrate and spaced apart from one another; and an etch stop pattern located on the substrate and surrounding at least a part of each of the plurality of lower electrodes, in which the etch stop pattern includes: a first etch stop pattern including carbon; and a second etch stop pattern located on the first etch stop pattern and including a material different from a material of the first etch stop pattern.


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