The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 21, 2020
Filed:
Jun. 21, 2018
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Hui-jung Kim, Seongnam-si, KR;
Sung-hee Han, Hwaseong-si, KR;
Ki-seok Lee, Hwaseong-si, KR;
Bong-soo Kim, Yongin-si, KR;
Yoo-sang Hwang, Suwon-si, KR;
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Abstract
An integrated circuit device may include a support pattern over a substrate, a lower electrode pattern and a dielectric structure over the substrate, and an upper electrode structure on the dielectric structure. The support pattern may include a first support structure extending in a vertical direction. The lower electrode pattern may be between the support pattern and the dielectric structure. The lower electrode pattern may include a first group of N (e.g., an integer of 4 or more) lower electrodes that are spaced apart from each other and may extend in the vertical direction to a first level above the substrate. The dielectric structure may include a first dielectric protrusion that extends in the vertical direction and surrounds the first support structure and the first group of N lower electrodes. The upper electrode structure may include a first upper electrode protrusion that surrounds the first dielectric protrusion.