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For the Inventor, By the Inventor

Tokyo, Japan

Yoichiro Mitani

USPTO Granted Patents = 12 

Average Co-Inventor Count = 5.0

ph-index = 1

Forward Citations = 5(Granted Patents)


Company Filing History:

goldMedal12 out of 15,906 
 
Mitsubishi Electric Corporation
 patents

Years Active: 2014-2022

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12 patents (USPTO):Explore Patents
1. 11233126 - SiC epitaxial wafer, semiconductor device, and power converter (2022-01-25),
2. 10964785 - SiC epitaxial wafer and manufacturing method of the same (2021-03-30),
3. 10950435 - SiC epitaxial wafer, method for manufacturing SiC epitaxial wafer, SiC device, and power conversion apparatus (2021-03-16),
4. 10858757 - Silicon carbide epitaxial substrate and silicon carbide semiconductor device (2020-12-08),
5. 10707075 - Semiconductor wafer, semiconductor device, and method for producing semiconductor device (2020-07-07),
6. 9988738 - Method for manufacturing SiC epitaxial wafer (2018-06-05),
7. 9957638 - Method for manufacturing silicon carbide semiconductor device (2018-05-01),
8. 9903048 - Single-crystal 4H-SiC substrate (2018-02-27),
9. 9752254 - Method for manufacturing a single-crystal 4H—SiC substrate (2017-09-05),
10. 9564315 - Manufacturing method and apparatus for manufacturing silicon carbide epitaxial wafer (2017-02-07),
11. 9422640 - Single-crystal 4H-SiC substrate (2016-08-23),
12. 8679952 - Method of manufacturing silicon carbide epitaxial wafer (2014-03-25),

Title: Yoichiro Mitani: A Trailblazer in Technological Innovation

Introduction:

Yoichiro Mitani, a visionary inventor based in Tokyo, Japan, is renowned for his relentless pursuit of innovation in the field of technology. With a total of 12 patents to his name, Mitani's passion for pushing the boundaries of technology continues to inspire the next generation of inventors and entrepreneurs worldwide.

Latest Patents:

Among his latest patents are groundbreaking inventions such as the SiC epitaxial wafer, semiconductor device, and power converter. The SiC epitaxial wafer comprises a high carrier concentration layer and low carrier concentration layers, aimed at enhancing device yield. Mitani's innovative approach to semiconductor technology is evident in his meticulous design and manufacturing methods.

Career Highlights:

Currently affiliated with Mitsubishi Electric Corporation, Mitani has made significant contributions to the company's technological advancements. His expertise in developing cutting-edge technologies has solidified his reputation as a trailblazer in the industry. Mitani's commitment to excellence and innovation is reflected in his impressive portfolio of patents.

Collaborations:

Throughout his career, Mitani has collaborated with esteemed colleagues such as Kenichi Hamano and Nobuyuki Tomita. These successful partnerships have resulted in the development of groundbreaking technologies and have further cemented Mitani's role as a leader in the field of innovation.

Conclusion:

Yoichiro Mitani's exceptional dedication to innovation and his unwavering commitment to pushing the boundaries of technology have positioned him as a true pioneer in the industry. His groundbreaking inventions not only revolutionize the field of technology but also inspire aspiring inventors and entrepreneurs worldwide. Mitani's legacy serves as a testament to the power of relentless innovation in shaping the future of technological advancement.

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