The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 30, 2021
Filed:
Jan. 18, 2018
Applicant:
Mitsubishi Electric Corporation, Tokyo, JP;
Inventors:
Assignee:
MITSUBISHI ELECTRIC CORPORATION, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/0312 (2006.01); H01L 29/16 (2006.01); H01L 29/20 (2006.01); H01L 29/66 (2006.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
H01L 29/1608 (2013.01); H01L 21/02378 (2013.01); H01L 21/02447 (2013.01); H01L 29/2003 (2013.01); H01L 29/66053 (2013.01);
Abstract
The object of the present invention is to enhance the device yield of SiC epitaxial wafers. The SiC epitaxial wafer includes a drift layer which is a SiC epitaxial layer. The drift layer has a film thickness of 18 μm or more and 350 μm or less and has arithmetic average roughness of 0.60 nm or more and 3.00 nm or less, and the impurity concentration thereof is 1×10/cmor more and 5×10/cmor less.