The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 05, 2018
Filed:
Dec. 26, 2013
Mitsubishi Electric Corporation, Chiyoda-ku, JP;
Nobuyuki Tomita, Tokyo, JP;
Yoichiro Mitani, Tokyo, JP;
Takanori Tanaka, Tokyo, JP;
Naoyuki Kawabata, Tokyo, JP;
Yoshihiko Toyoda, Tokyo, JP;
Takeharu Kuroiwa, Tokyo, JP;
Kenichi Hamano, Tokyo, JP;
Akihito Ono, Tokyo, JP;
Junji Ochi, Tokyo, JP;
Zempei Kawazu, Tokyo, JP;
Mitsubishi Electric Corporation, Chiyoda-ku, JP;
Abstract
A method for manufacturing a SiC epitaxial wafer includes: a first step of, by supplying a Si supply gas and a C supply gas, performing a first epitaxial growth on a SiC bulk substrate with a 4H—SiC(0001) having an off-angle of less than 5° as a main surface at a first temperature of 1480° C. or higher and 1530° C. or lower; a second step of stopping the supply of the Si supply gas and the C supply gas and increasing a temperature of the SiC bulk substrate from the first temperature to a second temperature; and a third step of, by supplying the Si supply gas and the C supply gas, performing a second epitaxial growth on the SiC bulk substrate having the temperature increased in the second step at the second temperature.