This inventor holds 20 USPTO granted patents and 1 published patent application, primarily in Silicon Carbide Semiconductors. Top assignees: Mitsubishi Electric Corporation, Mitsubishi Denki Kabushiki Kaisha. Active years: 2006-2018.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
Company Filing History:
12 out of 16,602 
8 out of 21,351 
Years Active: 2006-2018
Areas of Expertise:
Title: Nobuyuki Tomita: A Pioneer in Silicon Carbide Innovations
Introduction
Nobuyuki Tomita is a renowned inventor based in Tokyo, Japan, recognized for his significant contributions to semiconductor technology. With a remarkable portfolio of 20 patents, Tomita has focused primarily on advancements in silicon carbide (SiC) materials and their applications in semiconductor devices.
Latest Patents
Tomita's latest innovations include two key patents that showcase his expertise in the field. The first patent, titled "Method for Manufacturing SiC Epitaxial Wafer," describes a sophisticated process involving three steps to achieve high-quality SiC epitaxial growth on bulk substrates. This method effectively controls temperature and gas supply, enhancing the quality of the epitaxial layers.
The second patent, "Method for Manufacturing Silicon Carbide Semiconductor Device," outlines a technique for creating silicon carbide devices with optimal surface characteristics. This involves preparing a silicon carbide single crystal substrate and utilizing gas-etching processes to ensure minimal surface roughness, crucial for the performance of semiconductor devices.
Career Highlights
Throughout his career, Nobuyuki Tomita has worked with esteemed companies such as Mitsubishi Electric Corporation and Mitsubishi Denki Kabushiki Kaisha. His work at these organizations has contributed to advancing semiconductor manufacturing processes and technologies, solidifying his reputation as an innovator in the industry.
Collaborations
Tomita has collaborated with notable professionals, including Akihito Ohno and Kenichi Hamano. Their combined expertise and efforts have pushed the boundaries of silicon carbide research and development, fostering innovations that benefit various technological applications.
Conclusion
In conclusion, Nobuyuki Tomita stands out as a pivotal figure in semiconductor innovation, with a focus on silicon carbide technologies. His extensive patent portfolio and contributions to industry-leading companies highlight his dedication to advancing the field, making a significant impact on the future of electronics and materials science.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile