The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 12, 2011
Filed:
Mar. 16, 2009
Akihito Ohno, Tokyo, JP;
Masayoshi Takemi, Tokyo, JP;
Nobuyuki Tomita, Tokyo, JP;
Mitsubishi Electric Corporation, Tokyo, JP;
Abstract
A nitride semiconductor laminated structure comprises: a substrate; a first p-type nitride semiconductor layer formed using an organometallic compound as a Group III element source material, a p-type impurity source material, and ammonia as a Group V element source material, with the hydrogen concentration in the first p-type nitride semiconductor layer being 1×10cmor less; and a second p-type nitride semiconductor layer on the first p-type nitride semiconductor layer formed using an organometallic compound as a Group III element source material, a p-type impurity source material, and ammonia and a hydrazine derivative as Group V element source materials, with the carbon concentration in the second p-type nitride semiconductor layer being 1×10cmor less.