IDiyas

For the Inventor, By the Inventor

Tokyo, Japan

Akihito Ohno

USPTO Granted Patents = 20 

Average Co-Inventor Count = 3.0

ph-index = 1

Forward Citations = 7(Granted Patents)


Company Filing History:

goldMedal18 out of 15,844 
 
Mitsubishi Electric Corporation
 patents
silverMedal2 out of 21,351 
 
Mitsubishi Denki Kabushiki Kaisha
 patents

Years Active: 2007-2021

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20 patents (USPTO):
1. 10950435 - SiC epitaxial wafer, method for manufacturing SiC epitaxial wafer, SiC device, and power conversion apparatus (2021-03-16),
2. 10858758 - Manufacturing method for silicon carbide epitaxial wafer and manufacturing method for silicon carbide semiconductor device (2020-12-08),
3. 10711372 - Silicon carbide epitaxial wafer manufacturing method, silicon carbide semiconductor device manufacturing method and silicon carbide epitaxial wafer manufacturing apparatus (2020-07-14),
4. 10707075 - Semiconductor wafer, semiconductor device, and method for producing semiconductor device (2020-07-07),
5. 10370775 - Silicon carbide epitaxial wafer manufacturing method, silicon carbide semiconductor device manufacturing method and silicon carbide epitaxial wafer manufacturing apparatus (2019-08-06),
6. 9957638 - Method for manufacturing silicon carbide semiconductor device (2018-05-01),
7. 9903048 - Single-crystal 4H-SiC substrate (2018-02-27),
8. 9824911 - Substrate support and semiconductor manufacturing apparatus (2017-11-21),
9. 9752254 - Method for manufacturing a single-crystal 4H—SiC substrate (2017-09-05),
10. 9564315 - Manufacturing method and apparatus for manufacturing silicon carbide epitaxial wafer (2017-02-07),
11. 9478418 - Method of manufacturing semiconductor element (2016-10-25),
12. 9422640 - Single-crystal 4H-SiC substrate (2016-08-23),
13. 9355841 - Manufacturing method of high electron mobility transistor (2016-05-31),
14. 8731018 - Semiconductor laser (2014-05-20),
15. 8263999 - Nitride semiconductor light-emitting device (2012-09-11),

Title: Akihito Ohno: Pioneering Innovations in Tokyo

Introduction:

Akihito Ohno, a visionary inventor based in Tokyo, Japan, has carved a path of innovation with his relentless pursuit of technological advancement. With a remarkable portfolio of 20 patents under his belt, Ohno's passion for pushing the boundaries of invention has established him as a trailblazer in the world of technology.

Latest Patents:

Among his latest patents are groundbreaking inventions such as the SiC epitaxial wafer, method for manufacturing SiC epitaxial wafer, SiC device, and power conversion apparatus. These patents underscore Ohno's expertise in the field of silicon carbide technology, demonstrating his prowess in developing cutting-edge solutions for power conversion and semiconductor devices.

Career Highlights:

Having worked with prestigious companies like Mitsubishi Electric Corporation and Mitsubishi Denki Kabushiki Kaisha, Akihito Ohno has honed his skills and expertise in the domain of technology and innovation. His contributions have not only reshaped the industry landscape but have also set new benchmarks for excellence in invention and research.

Collaborations:

Throughout his career, Ohno has collaborated with esteemed individuals such as Nobuyuki Tomita and Kenichi Hamano, leveraging collective knowledge and expertise to drive innovation forward. These collaborations have not only enriched Ohno's own work but have also led to the development of groundbreaking technologies that have left a lasting impact on the industry.

Conclusion:

In conclusion, Akihito Ohno's unwavering commitment to innovation, coupled with his exceptional talent for invention, has positioned him as a prominent figure in the world of technology. His pioneering spirit and dedication to pushing the boundaries of what is possible continue to inspire future generations of inventors and innovators to strive for excellence in their pursuits.

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