The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 16, 2021
Filed:
Apr. 06, 2017
Mitsubishi Electric Corporation, Tokyo, JP;
Kenichi Hamano, Tokyo, JP;
Akihito Ohno, Tokyo, JP;
Takuma Mizobe, Fukuoka, JP;
Yasuhiro Kimura, Tokyo, JP;
Yoichiro Mitani, Tokyo, JP;
Mitsubishi Electric Corporation, Tokyo, JP;
Abstract
A SiC substrate () has an off angle θ°. A SiC epitaxial layer () having a film thickness of Tm μm is provided on the SiC substrate (). Triangular defects () are formed on a surface of the SiC epitaxial layer (). A density of triangular defects () having a length of Tm/Tan θ×0.9 or more in a substrate off direction is denoted by A. A density of triangular () defects having a length smaller than Tm/Tan θ×0.9 in the substrate off direction is denoted by B. B/A≤0.5 is satisfied.