The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 08, 2020
Filed:
Apr. 04, 2017
Mitsubishi Electric Corporation, Tokyo, JP;
Akihito Ohno, Tokyo, JP;
Mitsubishi Electric Corporation, Tokyo, JP;
Abstract
A silicon carbide substrate () is positioned such that a principal surface of the silicon carbide substrate () is parallel to a plurality of injection holes () of a horizontal CVD apparatus arranged in a row. Source gas is fed from the plurality of injection holes () to epitaxially grow a silicon carbide epitaxial growth layer () on the principal surface of the silicon carbide substrate (). The source gas fed from the plurality of injection holes () is divided into a plurality of system lines and controlled individually by separate mass flow controllers. A flow rate of the source gas on the principal surface of the silicon carbide substrate () is greater than 1 m/sec.