The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 27, 2018
Filed:
Jun. 15, 2016
Mitsubishi Electric Corporation, Tokyo, JP;
Akihito Ohno, Tokyo, JP;
Zempei Kawazu, Tokyo, JP;
Nobuyuki Tomita, Tokyo, JP;
Takanori Tanaka, Tokyo, JP;
Yoichiro Mitani, Tokyo, JP;
Kenichi Hamano, Tokyo, JP;
Mitsubishi Electric Corporation, Tokyo, JP;
Abstract
A single-crystal 4H-SiC substrate includes a 4H-SiC bulk single-crystal substrate; and an epitaxial first single-crystal 4H-SiC layer on the 4H-SiC bulk single-crystal substrate and having recesses. The recesses have a diameter no smaller than 2 μm and no larger than 20 μm. The recesses have a depth no smaller than 0.01 μm and no larger than 0.1 μm. A single-crystal 4H-SiC substrate also includes a 4H-SiC bulk single-crystal substrate; and an epitaxial first single-crystal 4H-SiC layer on the 4H-SiC bulk single-crystal substrate and having recesses. The density of the recesses in the epitaxial first single-crystal 4H-SiC layer is at least 10/cm, and the epitaxial first single-crystal 4H-SiC layer has a defect density no larger than 2/cm.