The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 31, 2016
Filed:
May. 22, 2015
Applicant:
Mitsubishi Electric Corporation, Tokyo, JP;
Inventors:
Assignee:
MITSUBISHI ELECTRIC CORPORATION, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02458 (2013.01); H01L 21/0254 (2013.01); H01L 21/02505 (2013.01); H01L 29/66462 (2013.01);
Abstract
A manufacturing method of a high electron mobility transistor includes: forming a GaN channel layer on a semi-insulating substrate in a first growth condition; forming a transition layer on the GaN channel layer while the first growth condition is changed to a second growth condition; and forming an AlGaN electron supply layer on the transition layer in the second growth condition, wherein the GaN channel layer, the transition layer, and the AlGaN electron supply layer are continuously formed without interrupting growth.