The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 05, 2017
Filed:
Jun. 15, 2016
Mitsubishi Electric Corporation, Tokyo, JP;
Akihito Ohno, Tokyo, JP;
Zempei Kawazu, Tokyo, JP;
Nobuyuki Tomita, Tokyo, JP;
Takanori Tanaka, Tokyo, JP;
Yoichiro Mitani, Tokyo, JP;
Kenichi Hamano, Tokyo, JP;
Mitsubishi Electric Corporation, Tokyo, JP;
Abstract
A method for manufacturing a single-crystal 4H—SiC substrate includes preparing a 4H—SiC bulk single-crystal substrate having a flat surface, and growing an epitaxial first single-crystal 4H—SiC layer having recesses on the 4H—SiC bulk single-crystal substrate to a thickness X, measured in micrometers (μm). The recesses have a diameter Y, measured in micrometers, no smaller than 0.2*X and no larger than 2*X. In addition, the recesses have a depth Z, when measured in micrometers, no smaller than (0.95*X+0.5*10), and no larger than 10*X*10.