The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 25, 2014
Filed:
Mar. 18, 2011
Nobuyuki Tomita, Tokyo, JP;
Kenichi Hamano, Tokyo, JP;
Masayoshi Tarutani, Tokyo, JP;
Yoichiro Mitani, Tokyo, JP;
Takeharu Kuroiwa, Tokyo, JP;
Masayuki Imaizumi, Tokyo, JP;
Hiroaki Sumitani, Tokyo, JP;
Kenichi Ohtsuka, Tokyo, JP;
Tomoaki Furusho, Tokyo, JP;
Takao Sawada, Tokyo, JP;
Yuji Abe, Tokyo, JP;
Nobuyuki Tomita, Tokyo, JP;
Kenichi Hamano, Tokyo, JP;
Masayoshi Tarutani, Tokyo, JP;
Yoichiro Mitani, Tokyo, JP;
Takeharu Kuroiwa, Tokyo, JP;
Masayuki Imaizumi, Tokyo, JP;
Hiroaki Sumitani, Tokyo, JP;
Kenichi Ohtsuka, Tokyo, JP;
Tomoaki Furusho, Tokyo, JP;
Takao Sawada, Tokyo, JP;
Yuji Abe, Tokyo, JP;
Mitsubishi Electric Corporation, Tokyo, JP;
Abstract
A method is provided in order to manufacture a silicon carbide epitaxial wafer whose surface flatness is very good and has a very low density of carrot defects and triangular defects arising after epitaxial growth. The silicon carbide epitaxial wafer is manufactured by a first step of annealing a silicon carbide bulk substrate that is tilted less than 5 degrees from <0001> face, in a reducing gas atmosphere at a first temperature Tfor a treatment time t, a second step of reducing the temperature of the substrate in the reducing gas atmosphere, and a third step of performing epitaxial growth at a second temperature Tbelow the annealing temperature Tin the first step, while supplying at least a gas including silicon atoms and a gas including carbon atoms.