Tokyo, Japan

Takeharu Kuroiwa

This inventor holds 39 USPTO granted patents and 1 published patent application, primarily in Silicon Carbide Devices. Top assignees: Mitsubishi Denki Kabushiki Kaisha, Renesas Electronics Corporation, Mitsubishi Electric Corporation. Active years: 1994-2021.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Takeharu Kuroiwa. Retrieved from https://idiyas.com/inventor/takeharu-kuroiwa

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 39 

% Patents Active = 64.1

Average Co-Inventor Count = 4.4

ph-index = 10

Forward Citations = 379(Granted Patents)


Location History:

  • Hyogo, JP (1994 - 2002)
  • Chiyoda-ku, JP (2008 - 2017)
  • Tokyo, JP (1999 - 2021)

Company Filing History:


Years Active: 1994-2021

Loading Chart...
Areas of Expertise:
Silicon Carbide
Semiconductor Device
Magnetic Memory
Memory Device
Epitaxial Wafer
Magnetic Storage
Magnetoresistive Effect
Nonvolatile Memory
Magnetic Field Detection
Capacitor Electrode
Dielectric Thin Film
Magnetic Tunnel Junction
39 patents (USPTO):Explore Patents

Title: **Takeharu Kuroiwa: A Pioneer in Silicon Carbide Technologies**

Introduction

Takeharu Kuroiwa is a prominent inventor based in Tokyo, Japan, known for his significant contributions to the field of semiconductor technology. With a remarkable portfolio of 39 patents, he has focused extensively on innovations involving silicon carbide substrates and semiconductor devices.

Latest Patents

Kuroiwa's latest patents include innovative methods for manufacturing silicon carbide substrates and silicon carbide semiconductor devices. His inventions aim to create a silicon carbide substrate with a low defect density that ensures that process devices remain uncontaminated. Notably, the silicon carbide substrate he developed features a substrate inner portion characterized by a non-dopant metal impurity concentration of 1×10^cm or more, surrounded by a substrate outer portion whose surface region has a significantly lower impurity concentration. Furthermore, the silicon carbide semiconductor device integrates a complex design, including a silicon carbide drift layer, body and source regions, trench structures, and a depletion suppressing layer meticulously arranged to enhance performance.

Career Highlights

Throughout his career, Kuroiwa has worked with prestigious companies such as Mitsubishi Electric Corporation and Renesas Electronics Corporation. His roles in these organizations have allowed him to engage in groundbreaking research and development, making him a pivotal figure in semiconductor innovation.

Collaborations

Kuroiwa's collaborations with esteemed industry colleagues, including Takashi Takenaga and Taisuke Furukawa, have further propelled advancements in silicon carbide technologies. These partnerships underline the importance of teamwork in fostering innovation within the tech industry.

Conclusion

Takeharu Kuroiwa's contributions to patent technology reflect his dedication to enhancing semiconductor capabilities. His inventions not only represent technical milestones but also contribute significantly to the future of electronics and materials science, marking him as a key player in the realm of modern innovations.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
Loading…