The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 17, 2021
Filed:
Feb. 20, 2018
Mitsubishi Electric Corporation, Tokyo, JP;
National University Corporation Nagoya University, Aichi, JP;
Tomoaki Furusho, Tokyo, JP;
Takanori Tanaka, Tokyo, JP;
Takeharu Kuroiwa, Tokyo, JP;
Toru Ujihara, Aichi, JP;
Shunta Harada, Aichi, JP;
Kenta Murayama, Aichi, JP;
MITSUBISHI ELECTRIC CORPORATION, Tokyo, JP;
NATIONAL UNIVERSITY CORPORATION NAGOYA UNIVERSITY, Aichi, JP;
Abstract
It is an object of the present invention to provide a silicon carbide substrate having a low defect density that does not contaminate a process device and a silicon carbide semiconductor device including the silicon carbide substrate. A silicon carbide substrate according to the present invention is a silicon carbide substrate including: a substrate inner portion; and a substrate outer portion surrounding the substrate inner portion, wherein non-dopant metal impurity concentration of the substrate inner portion is 1×10cmor more, and a region of the substrate outer portion at least on a surface side thereof is a substrate surface region in which the non-dopant metal impurity concentration is less than 1×10cm.