The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 24, 2017
Filed:
Apr. 18, 2011
Yoshiji Ohtsu, Aichi, JP;
Taku Kusunoki, Chiyoda-ku, JP;
Akira Yamada, Chiyoda-ku, JP;
Takeharu Kuroiwa, Chiyoda-ku, JP;
Masayoshi Tarutani, Chiyoda-ku, JP;
Kenji Ohtsu, Chiyoda-ku, JP;
Taku Kusunoki, Chiyoda-ku, JP;
Akira Yamada, Chiyoda-ku, JP;
Takeharu Kuroiwa, Chiyoda-ku, JP;
Masayoshi Tarutani, Chiyoda-ku, JP;
MITSUBISHI ELECTRIC CORPORATION, Tokyo, JP;
Abstract
The semiconductor element has an electrode including: a Ni-inclusion metal layer containing nickel formed on a side of at least one surface of the semiconductor-element constituting part; a Ni-barrier metal layer formed outwardly on a side of the Ni-inclusion metal layer opposite to the side toward the semiconductor-element constituting part; and a surface metal layer outwardly formed on a side of the Ni-barrier metal layer opposite to the side toward the semiconductor-element constituting part, to be connected to the metal nanoparticles sintered layer; wherein the Ni-barrier metal layer contains a metal for suppressing diffusion of nickel toward the surface metal layer.