Mitsubishi Denki Kabushiki Kaisha

Renesas Electronics Corporation

Mitsubishi Electric Corporation

Renesas Technology Corp.

Nagoya University

Takeharu Kuroiwa

Takashi Takenaga

Taisuke Furukawa

Shuichi Ueno

Noboru Mikami

Hiroshi Takada

Tetsuro Makita

Ryoji Matsuda

Tomonori Okudaira

Tsuyoshi Horikawa

Masakazu Taki

Haruo Furuta

Keiichiro Kashihara

Nobuo Fujiwara

Sadeh Beysen

Hiroshi Kobayashi

Masayoshi Tarutani

Teruo Shibano

Yuji Abe

Takanori Tanaka

Nobuyuki Tomita

Kenichi Hamano

Yoichiro Mitani

Yoshikazu Tsunemine

Tomoaki Furusho

Kiyoshi Kawabata

Yiming Huai

Akira Yamada

Eugene Youjun Chen

Koichi Akiyama

Fusaoki Uchikawa

Masayuki Imaizumi

Lien-Chang Wang

Yasuhiro Kagawa

Yuji Kawano

Yutaka Fukui

Shigeru Matsuno

Kenichi Ohtsuka

Rina Tanaka

Yosuke Takeuchi

Katsutoshi Sugawara

Yoshihiko Toyoda

Zempei Kawazu

Hisao Watarai

Tatsuya Fukumura

Toru Ujihara

Toshihisa Honda

Takao Sawada

Hiroaki Sumitani

Shingo Tomohisa

Akihito Ono

Naoyuki Kawabata

Shunta Harada

Taku Kusunoki

Shin-ichi Kinouchi

Kenji Ohtsu

Beysen Sadeh

Junji Ochi

Kenta Murayama

Tsuyosi Horikawa

Takashi Higaki

It is an object of the present invention to provide a silicon carbide substrate having a low defect density that does not contaminate a process device and a silicon carbide semiconductor device including the silicon carbide substrate. A silicon carbide substrate according to the present invention is a silicon carbide substrate including: a substrate inner portion; and a substrate outer portion surrounding the substrate inner portion, wherein non-dopant metal impurity concentration of the substrate inner portion is 1&#xd7;10cmor more, and a region of the substrate outer portion at least on a surface side thereof is a substrate surface region in which the non-dopant metal impurity concentration is less than 1&#xd7;10cm.

Silicon carbide substrate, method for manufacturing silicon carbide substrate, and method for manufacturing silicon carbide semiconductor device

A silicon carbide semiconductor device includes a silicon carbide drift layer formed on an upper surface of a silicon carbide semiconductor substrate having an off angle, a body region, a source region, a plurality of trenches, a gate insulating film, a gate electrode, a source electrode, a drain electrode, and a depletion suppressing layer. The depletion suppressing layer is positioned to be sandwiched between the plurality of trenches in a plan view, and in a direction with the off angle of the silicon carbide semiconductor substrate, a distance between the depletion suppressing layer and one of the trenches adjacent to the depletion suppressing layer is different from another distance between the depletion suppressing layer and the other one of the trenches adjacent to the depletion suppressing layer.

Silicon carbide semiconductor device

A method for manufacturing a SiC epitaxial wafer includes: a first step of, by supplying a Si supply gas and a C supply gas, performing a first epitaxial growth on a SiC bulk substrate with a 4H&#x2014;SiC(0001) having an off-angle of less than 5&#xb0; as a main surface at a first temperature of 1480&#xb0; C. or higher and 1530&#xb0; C. or lower; a second step of stopping the supply of the Si supply gas and the C supply gas and increasing a temperature of the SiC bulk substrate from the first temperature to a second temperature; and a third step of, by supplying the Si supply gas and the C supply gas, performing a second epitaxial growth on the SiC bulk substrate having the temperature increased in the second step at the second temperature.

Method for manufacturing SiC epitaxial wafer

The semiconductor element has an electrode including: a Ni-inclusion metal layer containing nickel formed on a side of at least one surface of the semiconductor-element constituting part; a Ni-barrier metal layer formed outwardly on a side of the Ni-inclusion metal layer opposite to the side toward the semiconductor-element constituting part; and a surface metal layer outwardly formed on a side of the Ni-barrier metal layer opposite to the side toward the semiconductor-element constituting part, to be connected to the metal nanoparticles sintered layer; wherein the Ni-barrier metal layer contains a metal for suppressing diffusion of nickel toward the surface metal layer.

Semiconductor element, semiconductor device and method for manufacturing semiconductor element

A magnetic position detecting device includes a magnet; first to fourth magnetoelectric conversion elements formed on a virtual plane; and a flux guide made of a magnetic material. The flux guide includes first and second protrusions provided at a distance from each other in a direction parallel to the virtual plane. A specific portion recessed in a concave shape is provided in the flux guide in a mid-portion between the first and second protrusions. The first and fourth magnetoelectric conversion elements are provided approximately in the mid-portion between the first and second protrusions. The second magnetoelectric conversion element is provided between the first protrusion and the mid-portion.

Magnetic position detecting device

A method is provided in order to manufacture a silicon carbide epitaxial wafer whose surface flatness is very good and has a very low density of carrot defects and triangular defects arising after epitaxial growth. The silicon carbide epitaxial wafer is manufactured by a first step of annealing a silicon carbide bulk substrate that is tilted less than 5 degrees from &#x3c;0001&#x3e; face, in a reducing gas atmosphere at a first temperature Tfor a treatment time t, a second step of reducing the temperature of the substrate in the reducing gas atmosphere, and a third step of performing epitaxial growth at a second temperature Tbelow the annealing temperature Tin the first step, while supplying at least a gas including silicon atoms and a gas including carbon atoms.

Method of manufacturing silicon carbide epitaxial wafer

Disclosed is a method for manufacturing a magnetic storage device comprising a TMR element, which comprises a step for forming an insulting film on an interlayer insulating film provided with a wiring layer, an opening formation step for forming an opening in the insulating film so that the wiring layer is exposed therefrom, a metal layer formation step for forming a metal layer on the insulating layer so that the opening is filled therewith, a CMP step for polishing and removing the metal layer on the insulating layer by a CMP method and forming the metal layer remaining in the opening into a lower electrode, and a step for forming a TMR element on the lower electrode. Also disclosed is a magnetic storage device comprising an interlayer insulating film provided with a wiring layer, an insulating film formed on the interlayer insulating film, an opening formed in the insulating film so that the wiring layer is exposed therefrom, a barrier metal layer provided so as to cover the inner surface of the opening, a lower electrode formed on the barrier metal so as to fill the opening, and a TMR element formed on the lower electrode.

Method for manufacturing magnetic storage device and magnetic storage device

A magnetic storage device stable in write characteristic is provided. A first nonmagnetic film is provided over a recording layer. A first ferromagnetic film is provided over the first nonmagnetic film and has a first magnetization and a first film thickness. A second nonmagnetic film is provided over the first ferromagnetic film. A second ferromagnetic film is provided over the second nonmagnetic film, is coupled in antiparallel with the first ferromagnetic film, and has a second magnetization and a second film thickness. An antiferromagnetic film is provided over the second ferromagnetic film. The sum of the product of the first magnetization and the first film thickness and the product of the second magnetization and the second film thickness is smaller than the product of the magnetization of the recording layer and the film thickness of the recording layer.

Magnetic storage device

A magnetic storage device which enables stable operation at the time of recording information into MRAM and the stable retention of recorded information. The die of the magnetic storage device has a substrate, first and second wirings, a magnetic storage element and a first magnetic shielding structure. The first magnetic shielding structure is formed to cover the magnetic storage element in a plan view. Second and third magnetic shielding structures sandwich the die in a thickness direction. A lead frame member has the die mounted thereon and contains a ferromagnetic material. The lead frame member overlaps with only part of the die in a plan view.

There are provided magnetic storage elements capable of performing a high-reliability write operation by inhibiting erroneous reversal of data of the magnetic storage element put in a semi-selected state, and a magnetic storage device using this. A recording layer having an easy axis and a hard axis overlaps at least one of a first or second conductive layer at the entire region thereof in plan view. First endpoints of a first line segment along the easy axis and maximum in dimension overlapping the recording layer in plan view don't overlap the second conductive layer in plan view. At least one of second endpoints of a pair of endpoints of a second line segment passing through the middle point of the first line segment, orthogonal to the first line segment in plan view, and overlapping the recording layer in plan view doesn't overlap the first conductive layer in plan view.

Magnetic storage element and magnetic storage device

A semiconductor device having a MTJ device excellent in operating characteristics and a manufacturing method therefor are provided. The MTJ device is formed of a laminated structure which is obtained by laminating a lower magnetic film, a tunnel insulating film, and an upper magnetic film in this order. The lower and upper magnetic films contain noncrystalline or microcrystalline ferrocobalt boron (CoFeB) as a constituent material. The tunnel insulating film contains aluminum oxide (AlO) as a constituent material. A CAP layer is formed over the upper magnetic film and a hard mask is formed over the CAP layer. The CAP layer contains a substance of crystalline ruthenium (Ru) as a constituent material and the hard mask contains a substance of crystalline tantalum (Ta) as a constituent material. The film thickness of the hard mask is larger than that of the CAP layer.

Semiconductor device including a magnetic tunnel junction device including a laminated structure and manufacturing method therefor

A magnetic field detection device including a magnetic body (magnetic flux guide) provided for adjusting a magnetic field to be applied to a magneto-resistance element. A shape of an on-substrate magnetic body in plan view is a tapered shape on one end portion side and a substantially funnel shape on another end portion side opposite the one end portion, the another end portion being larger in width than the one end portion, and a magneto-resistance element is disposed in front of an output-side end portion. In the on-substrate magnetic body, a contour of a tapered portion is not linear like a funnel, but has a curved shape in which a first curved portion protruding outward with a gentle curvature and a second curved portion protruding inward with a curvature similar to that of the first curved portion are continuously formed.

Magnetic field detection device

Magnetic memory element includes recording layer changing magnetization direction by external magnetic field, having easy-axis and hard-axis crossing easy-axis, first conductive layer forming magnetic field in direction crossing direction of easy-axis at layout position of recording layer, second conductive layer extending in direction crossing first conductive layer and forming magnetic field in direction crossing direction of hard-axis at layout position of recording layer. Recording layer has at least part between first conductive layer and second conductive layer. Planar-shaped recording layer viewed from direction where first and second conductive layers and recording layer are laminated, has portion located on side and other portion located on other side, with respect to virtual first center line of first conductive layer along direction where first conductive layer extends viewed from lamination direction. Area of portion viewed from lamination direction is less than or equal to one-third area of other portion.

Magnetic memory element and magnetic memory device

There is provided a magnetic memory device stable in write characteristics. The magnetic memory device has a recording layer. The planar shape of the recording layer has the maximum length in the direction of the easy-axis over a primary straight line along the easy-axis, and is situated over a length smaller than the half of the maximum length in the direction perpendicular to the easy-axis, and on the one side and on the other side of the primary straight line respectively, the planar shape has a first part situated over a length in the direction perpendicular to the easy-axis, and a second part situated over a length smaller than the length in the direction perpendicular to the easy-axis. The outer edge of the first part includes only a smooth curve convex outwardly of the outer edge.

Magnetic memory device having a recording layer

Growing community of inventors

Tokyo, Japan

Takeharu Kuroiwa