The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 26, 2013
Filed:
Aug. 03, 2012
Ryoji Matsuda, Tokyo, JP;
Shuichi Ueno, Tokyo, JP;
Haruo Furuta, Tokyo, JP;
Takashi Takenaga, Tokyo, JP;
Takeharu Kuroiwa, Tokyo, JP;
Ryoji Matsuda, Tokyo, JP;
Shuichi Ueno, Tokyo, JP;
Haruo Furuta, Tokyo, JP;
Takashi Takenaga, Tokyo, JP;
Takeharu Kuroiwa, Tokyo, JP;
Renesas Electronics Corporation, Kawasaki-Shi, JP;
Abstract
A semiconductor device having a MTJ device excellent in operating characteristics and a manufacturing method therefor are provided. The MTJ device is formed of a laminated structure which is obtained by laminating a lower magnetic film, a tunnel insulating film, and an upper magnetic film in this order. The lower and upper magnetic films contain noncrystalline or microcrystalline ferrocobalt boron (CoFeB) as a constituent material. The tunnel insulating film contains aluminum oxide (AlO) as a constituent material. A CAP layer is formed over the upper magnetic film and a hard mask is formed over the CAP layer. The CAP layer contains a substance of crystalline ruthenium (Ru) as a constituent material and the hard mask contains a substance of crystalline tantalum (Ta) as a constituent material. The film thickness of the hard mask is larger than that of the CAP layer.