The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 09, 2008

Filed:

Mar. 25, 2005
Applicants:

Eiji Yagyu, Tokyo, JP;

Nobuyuki Tomita, Tokyo, JP;

Eitaro Ishimura, Tokyo, JP;

Masaharu Nakaji, Tokyo, JP;

Inventors:

Eiji Yagyu, Tokyo, JP;

Nobuyuki Tomita, Tokyo, JP;

Eitaro Ishimura, Tokyo, JP;

Masaharu Nakaji, Tokyo, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 31/107 (2006.01);
U.S. Cl.
CPC ...
Abstract

An avalanche photodiode according to this invention include a light receiving regionsurrounded by a ring-shaped trench, a first electrodeformed on the light receiving region, a second electrodeformed on the periphery of the ring-shaped trenchsurrounding the light receiving region, a first semiconductor layer lying just under the first electrode, and a second semiconductor layer lying just under the second electrode. Conductivity types of the first semiconductor and the second semiconductor are identical.


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