Tokyo, Japan

Masaharu Nakaji

This inventor holds 27 USPTO granted patents and 4 published patent applications, primarily in Semiconductor Photodetectors. Top assignees: Mitsubishi Electric Corporation, Mitsubishi Denki Kabushiki Kaisha. Active years: 2004-2017.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Masaharu Nakaji. Retrieved from https://idiyas.com/inventor/masaharu-nakaji

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 27 

% Patents Active = 74.1

Average Co-Inventor Count = 2.4

ph-index = 5

Forward Citations = 68(Granted Patents)


Location History:

  • Chiyoda-ku, JP (2014)
  • Tokyo, JP (2004 - 2017)

Company Filing History:


Years Active: 2004-2017

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Areas of Expertise:
Avalanche Photodiode
Semiconductor
Photodetector
Light Receiving Element
Quantum Efficiency
Optical Semiconductor
Waveguide
Light Reflective Structures
Buried-Waveguide
Light Detecting Element
Photoreceptor Device
27 patents (USPTO):Explore Patents

Title: Masaharu Nakaji: Innovator in Semiconductor Technology

Introduction

Masaharu Nakaji is a prominent inventor based in Tokyo, Japan, known for his significant contributions to the field of semiconductor technology. With an impressive portfolio of 27 patents, Nakaji has made strides in developing various innovative solutions that enhance the performance and reliability of semiconductor devices.

Latest Patents

Two of Nakaji's latest patents exemplify his expertise in this domain. The first patent, related to an avalanche photodiode, features a configuration that includes a substrate with a first electrode and a first semiconductor layer. This innovative design leads to a reduction in dark current and enhances long-term reliability through a simplified manufacturing process. Nakaji's distinct approach involves carefully layering the avalanche multiplication layer, light absorption layer, and a larger bandgap second semiconductor layer. This invention not only improves device performance but also simplifies the production process.

The second patent focuses on a semiconductor light-receiving device, which incorporates a carefully arranged set of layers, including a substrate, p-type conductive layer, and a light absorption layer with a smaller bandgap than the incident light. This configuration aims to optimize the avalanche multiplication and enhance the device's effectiveness while minimizing the need for external power sources.

Career Highlights

Throughout his career, Nakaji has worked with leading companies in the semiconductor industry, notably Mitsubishi Electric Corporation and Mitsubishi Denki Kabushiki Kaisha. His engagement in these esteemed organizations has allowed him to leverage advanced research and development resources, further driving innovation in semiconductor technology.

Collaborations

Throughout his journey, Nakaji has collaborated with distinguished colleagues, including Eitaro Ishimura and Eiji Yagyu. These collaborations have played a crucial role in amplifying his inventions' reach and impact in the semiconductor field.

Conclusion

Masaharu Nakaji stands out as a formidable figure in the semiconductor industry, noted for his innovative solutions and patents that mark significant advancements in technology. His work continues to inspire future developments in semiconductor applications, promising enhanced performance and reliability for various electronic devices.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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