The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 03, 2016
Filed:
Oct. 29, 2013
Applicant:
Mitsubishi Electric Corporation, Tokyo, JP;
Inventors:
Assignee:
MITSUBISHI ELECTRIC CORPORATION, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03F 3/08 (2006.01); G01J 1/02 (2006.01); H01L 31/0203 (2014.01);
U.S. Cl.
CPC ...
G01J 1/0204 (2013.01); G01J 1/0271 (2013.01); H01L 31/0203 (2013.01); H01L 2224/45144 (2013.01); H01L 2224/48091 (2013.01); H01L 2224/48137 (2013.01); H01L 2224/48465 (2013.01); H01L 2224/73265 (2013.01);
Abstract
A semiconductor photodetector device includes a header, a high frequency amplifier, and a submount having a top surface. The high frequency amplifier is located on the header and has a top surface with a high frequency grounding pad disposed on the top surface of the amplifier. First and second electrode pads are located on the top surface of the submount. A semiconductor photodetector having a footprint smaller than the first electrode pad is bonded to the first electrode pad. The high frequency grounding pad is connected to the second electrode pad by a wire.