The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 02, 2016
Filed:
Oct. 30, 2015
Mitsubishi Electric Corporation, Tokyo, JP;
MITSUBISHI ELECTRIC CORPORATION, Tokyo, JP;
Abstract
A semiconductor light-receiving device includes: a substrate; a p-type conductive layer, a light absorption layer having a smaller bandgap than that of incident light, a multiplication layer producing avalanche multiplication, and an n-type window layer laminated in that order on the substrate; an n-type conductive layer in a region of part of the n-type window layer; and a first p-type conductive region in a region of the n-type window layer that is not in contact with the n-type conductive layer, wherein the first p-type conductive region does not reach the multiplication layer and is not in contact with any electrode to which power is supplied from outside.