The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 15, 2009
Filed:
Nov. 16, 2007
Akihito Ohno, Tokyo, JP;
Masayoshi Takemi, Tokyo, JP;
Nobuyuki Tomita, Tokyo, JP;
Mitsubishi Denki Kabushiki Kaisha, Tokyo, JP;
Abstract
A technique is provided which enables formation of nitride semiconductor layers with excellent flatness and excellent crystallinity on a gallium nitride substrate (GaN substrate), while improving the producibility of the semiconductor device using the GaN substrate. A gallium nitride substrate is prepared which has an upper surface having an off-angle of not less than 0.1° nor more than 1.0° in a <1-100> direction, with respect to a (0001) plane. Then, a plurality of nitride semiconductor layers including an n-type semiconductor layer are stacked on the upper surface of the gallium nitride substrate to form a semiconductor device such as a semiconductor laser.