Company Filing History:

12 out of 40,635

Taiwan Semiconductor Manufacturing Comp. Ltd.

patents

3 out of 7,074

United Microelectronics Corp.

patents

Years Active: 2009-2017

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15 patents (USPTO):Sort by Forward Citations

Abstract keywords

1. 9601388 - Integrated high-K/metal gate in CMOS process flow (2017-03-21),

2. 9362124 - Method of patterning a metal gate of semiconductor device (2016-06-07),

3. 9257426 - Integrated high-k/metal gate in CMOS process flow (2016-02-09),

4. 8993452 - Method of patterning a metal gate of semiconductor device (2015-03-31),

5. 8841731 - Integrated high-k/metal gate in CMOS process flow (2014-09-23),

6. 8551837 - Methods of fabricating high-K metal gate devices (2013-10-08),

7. 8383502 - Integrated high-K/metal gate in CMOS process flow (2013-02-26),

8. 8357617 - Method of patterning a metal gate of semiconductor device (2013-01-22),

9. 8349680 - High-k metal gate CMOS patterning method (2013-01-08),

10. 8153523 - Method of etching a layer of a semiconductor device using an etchant layer (2012-04-10),

11. 8148249 - Methods of fabricating high-k metal gate devices (2012-04-03),

12. 8071487 - Patterning method using stacked structure (2011-12-06),

13. 8003507 - Method of integrating high-K/metal gate in CMOS process flow (2011-08-23),

14. 7642152 - Method of fabricating spacers and cleaning method of post-etching and semiconductor device (2010-01-05),

15. 7592265 - Method of trimming a hard mask layer, method for fabricating a gate in a MOS transistor, and a stack for fabricating a gate in a MOS transistor (2009-09-22),

Title: Yi-Hsing Chen: Innovator in Semiconductor Technology

Introduction

Yi-Hsing Chen is a prominent inventor based in Changhua, Taiwan. He has made significant contributions to the field of semiconductor technology, holding a total of 15 patents. His work has been instrumental in advancing the manufacturing processes of semiconductor devices.

Latest Patents

Among his latest patents is the "Integrated high-K/metal gate in CMOS process flow." This patent describes a method of fabricating a semiconductor device that involves providing a semiconductor substrate with distinct regions, forming dielectric and metal layers, and subsequently removing portions of these layers to create a functional semiconductor device. Another notable patent is the "Method of patterning a metal gate of semiconductor device," which outlines innovative methods for patterning metal gate structures using a soluble hard mask layer, enhancing the efficiency of the semiconductor fabrication process.

Career Highlights

Yi-Hsing Chen has worked with leading companies in the semiconductor industry, including Taiwan Semiconductor Manufacturing Company Ltd. and United Microelectronics Corporation. His experience in these organizations has allowed him to refine his skills and contribute to groundbreaking advancements in semiconductor technology.

Collaborations

Throughout his career, Yi-Hsing Chen has collaborated with talented individuals such as Ryan Chia-Jen Chen and Chien-Hao Chen. These collaborations have fostered an environment of innovation and creativity, leading to the development of cutting-edge technologies in the semiconductor field.

Conclusion

Yi-Hsing Chen's contributions to semiconductor technology through his patents and collaborations highlight his role as a key innovator in the industry. His work continues to influence the future of semiconductor manufacturing processes.

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