The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 06, 2011
Filed:
Aug. 15, 2006
Meng-jun Wang, Taichung County, TW;
Yi-hsing Chen, Changhua County, TW;
Jiunn-hsiung Liao, Tainan County, TW;
Min-chieh Yang, Kaohsiung, TW;
Chuan-kai Wang, Tainan County, TW;
Meng-Jun Wang, Taichung County, TW;
Yi-Hsing Chen, Changhua County, TW;
Jiunn-Hsiung Liao, Tainan County, TW;
Min-Chieh Yang, Kaohsiung, TW;
Chuan-Kai Wang, Tainan County, TW;
United Microelectronics Corp., Science-Based Industrial Park, Hsinchu, TW;
Abstract
A stacked structure for patterning a material layer to form an opening pattern with a predetermined opening width in the layer is provided. The stacked structure includes an underlayer, a silicon rich organic layer, and a photoresist layer. The underlayer is on the material layer. The silicon rich organic layer is between the underlayer and the photoresist layer. The thickness of the photoresist layer is smaller than that of the underlayer and larger than two times of the thickness of the silicon rich organic layer. The thickness of the underlayer is smaller than three times of the predetermined opening width.