Tainan, Taiwan

Chuan-Kai Wang

This inventor holds 2 USPTO granted patents. Top assignee: United Microelectronics Corp.. Active years: 2010-2011.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Chuan-Kai Wang. Retrieved from https://idiyas.com/inventor/chuan-kai-wang-62nnimut

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 5.0

ph-index = 1

Forward Citations = 3(Granted Patents)


Location History:

  • Shanhua Township, Tainan County, TW (2010)
  • Tainan County, TW (2011)

Company Filing History:


Years Active: 2010-2011

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2 patents (USPTO):Explore Patents

Title: Chuan-Kai Wang: Innovator in Semiconductor Technology

Introduction

Chuan-Kai Wang is a notable inventor based in Tainan, Taiwan. He has made significant contributions to the field of semiconductor technology, holding a total of 2 patents. His work focuses on innovative methods that enhance the efficiency and effectiveness of semiconductor devices.

Latest Patents

Wang's latest patents include a "Patterning method using stacked structure." This patent describes a stacked structure for patterning a material layer to form an opening pattern with a predetermined opening width. The structure consists of an underlayer, a silicon-rich organic layer, and a photoresist layer. The underlayer is positioned on the material layer, while the silicon-rich organic layer is sandwiched between the underlayer and the photoresist layer. The thickness of the photoresist layer is smaller than that of the underlayer and larger than twice the thickness of the silicon-rich organic layer. Additionally, the thickness of the underlayer is less than three times the predetermined opening width.

Another significant patent is the "Method of fabricating spacers and cleaning method of post-etching and semiconductor device." This patent outlines a method for fabricating spacers, which involves providing a substrate with a device structure formed thereon. The device structure includes a gate structure and a pair of source/drain regions. A spacer material layer is formed over the substrate, followed by an etching process to create spacers on the sidewalls of the gate structure. A plasma treatment step is then performed to form a spacer protection layer on the substrate, spacers, and gate structure.

Career Highlights

Chuan-Kai Wang is currently employed at United Microelectronics Corporation, a leading company in the semiconductor industry. His work at this organization has allowed him to contribute to cutting-edge technologies and advancements in semiconductor manufacturing.

Collaborations

Wang has collaborated with several talented individuals in his field, including Yi-Hsing Chen and Jiunn-Hsiung Liao. These collaborations have fostered innovation and have led to the development of new technologies in semiconductor applications.

Conclusion

Chuan-Kai Wang is a prominent figure in semiconductor innovation, with a focus on improving manufacturing processes and device efficiency. His contributions through patents and collaborations highlight his commitment to advancing technology in this critical field.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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