United Microelectronics Corp.

Chuan-Kai Wang

Yi-Hsing Chen

Jiunn-Hsiung Liao

Min-Chieh Yang

Meng-Jun Wang

Chia-Jui Liu

Juan-Yi Chen

Ming-Yi Lin

A stacked structure for patterning a material layer to form an opening pattern with a predetermined opening width in the layer is provided. The stacked structure includes an underlayer, a silicon rich organic layer, and a photoresist layer. The underlayer is on the material layer. The silicon rich organic layer is between the underlayer and the photoresist layer. The thickness of the photoresist layer is smaller than that of the underlayer and larger than two times of the thickness of the silicon rich organic layer. The thickness of the underlayer is smaller than three times of the predetermined opening width.

Patterning method using stacked structure

A method of fabricating spacers is provided. The method includes providing a substrate with a device structure formed thereon. The device structure comprises a gate structure and a pair of source/drain regions. Then, a spacer material layer is formed over the substrate to cover the substrate and the device structure. Thereafter, an etching process is performed to remove a portion of the spacer material layer so that spacers are formed on the respective sidewalls of the gate structure. After that, a plasma treatment step is performed to form a spacer protection layer on the surface of the substrate, the spacers and the gate structure.

Method of fabricating spacers and cleaning method of post-etching and semiconductor device

Growing community of inventors

Tainan County, Taiwan

Chuan-Kai Wang