The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 05, 2010
Filed:
Sep. 07, 2005
Chuan-kai Wang, Shanhua Township, Tainan County, TW;
Yi-hsing Chen, Changhua, TW;
Chia-jui Liu, Yangmei Township, Taoyuan County, TW;
Juan-yi Chen, Chiai, TW;
Ming-yi Lin, Keelung, TW;
Chuan-Kai Wang, Shanhua Township, Tainan County, TW;
Yi-Hsing Chen, Changhua, TW;
Chia-Jui Liu, Yangmei Township, Taoyuan County, TW;
Juan-Yi Chen, Chiai, TW;
Ming-Yi Lin, Keelung, TW;
United Microelectronics Corp., Hsinchu, TW;
Abstract
A method of fabricating spacers is provided. The method includes providing a substrate with a device structure formed thereon. The device structure comprises a gate structure and a pair of source/drain regions. Then, a spacer material layer is formed over the substrate to cover the substrate and the device structure. Thereafter, an etching process is performed to remove a portion of the spacer material layer so that spacers are formed on the respective sidewalls of the gate structure. After that, a plasma treatment step is performed to form a spacer protection layer on the surface of the substrate, the spacers and the gate structure.