The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 09, 2016
Filed:
Sep. 10, 2014
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Ryan Chia-Jen Chen, Chiayi, TW;
Yi-Shien Mor, Hsinchu, TW;
Yi-Hsing Chen, Changhua, TW;
Kuo-Tai Huang, HsinChu, TW;
Chien-Hao Chen, Ilan county, TW;
Yih-Ann Lin, Jhudong Township, TW;
Jr Jung Lin, Hsinchu, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Abstract
A semiconductor device includes a semiconductor substrate that has a first-type active region and a second-type active region, a dielectric layer over the semiconductor substrate, a first metal layer having a first work function formed over the dielectric layer, the first metal layer being at least partially removed from over the second-type active region, a second metal layer over the first metal layer in the first-type active region and over the dielectric layer in the second-type active region, the second metal layer having a second work function, and a third metal layer over the second metal layer in the first-type active region and over the second metal layer in the second-type active region.