The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 08, 2013
Filed:
Aug. 06, 2009
Kong-beng Thei, Hsin-Chu Country, TW;
Harry Chuang, Hsin-Chu, TW;
Ryan Chia-jen Chen, Chiayi, TW;
Su-chen Lai, Hsinchu, TW;
Yi-shien Mor, Hsinchu, TW;
Yi-hsing Chen, Changhua, TW;
Gary Shen, Yonghe, TW;
Yu Chao Lin, Rende Township, Tainan County, TW;
Kong-Beng Thei, Hsin-Chu Country, TW;
Harry Chuang, Hsin-Chu, TW;
Ryan Chia-Jen Chen, Chiayi, TW;
Su-Chen Lai, Hsinchu, TW;
Yi-Shien Mor, Hsinchu, TW;
Yi-Hsing Chen, Changhua, TW;
Gary Shen, Yonghe, TW;
Yu Chao Lin, Rende Township, Tainan County, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Abstract
The present disclosure provides a method of fabricating a semiconductor device. The method includes providing a semiconductor substrate having a first active region and a second active region, forming a high-k dielectric layer over the semiconductor substrate, forming a capping layer over the high-k dielectric layer, forming a first metal layer over the capping layer, the first metal layer having a first work function, forming a mask layer over the first metal layer in the first active region, removing the first metal layer and at least a portion of the capping layer in the second active region using the mask layer, and forming a second metal layer over the partially removed capping layer in the second active region, the second metal layer having a second work function.