The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 22, 2009
Filed:
Jan. 04, 2007
Meng-jun Wang, Taichung County, TW;
Yi-hsing Chen, Changhua County, TW;
Min-chieh Yang, Kao-Hsiung, TW;
Jiunn-hsiung Liao, Tainan Hsien, TW;
Meng-Jun Wang, Taichung County, TW;
Yi-Hsing Chen, Changhua County, TW;
Min-Chieh Yang, Kao-Hsiung, TW;
Jiunn-Hsiung Liao, Tainan Hsien, TW;
United Microelectronics Corp., Hsin-Chu, TW;
Abstract
A method of trimming hard mask is provided. The method includes providing a substrate, a hard mask layer, and a tri-layer stack on the substrate. The tri-layer stack includes a top photo resist layer, a silicon photo resist layer, and a bottom photo resist layer. The top photo resist layer, the silicon photo resist layer, the bottom photo resist layer, and the hard mask layer are patterned sequentially. A trimming process is performed on the hard mask layer. The bottom photo resist layer of the present invention is thinner and loses some height in the etching process, so the bottom photo resist layer will not collapse.