Scarsdale, NY, United States of America

Yanning Sun

This inventor holds 46 USPTO granted patents and 7 published patent applications, primarily in III-V Semiconductor Devices. Top assignees: International Business Machines Corporation, Globalfoundries Inc.. Active years: 2011-2026.

USPTO Granted Patents = 46 

% Patents Active = 52.2

Average Co-Inventor Count = 3.9

ph-index = 5

Forward Citations = 117(Granted Patents)


Location History:

  • White Plains, NY (US) (2011 - 2014)
  • Yorktown Heights, NY (US) (2014)
  • Scarsdale, NY (US) (2014 - 2021)

Company Filing History:


Years Active: 2011-2026

Loading Chart...
Areas of Expertise:
III-V Transistor
Self-Aligned Contacts
MOSFET
Low Defect Density
Field Effect Transistor
Asymmetric Structures
Doped Semiconductors
Dielectric Layer
Current Leakage
Metal-III-V Contacts
Complementary Metal-Oxide-Semiconductor
Semiconductor Growth
46 patents (USPTO):Explore Patents

Title: **Yanning Sun: A Semiconductor Innovator from Scarsdale, NY**

Introduction

Yanning Sun is a prominent inventor based in Scarsdale, New York, renowned for his contributions to the field of semiconductor technology. With an impressive portfolio of 44 patents, Yanning has significantly advanced innovations in semiconductor devices. His work primarily focuses on III-V semiconductor materials, which are critical in improving the performance and efficiency of electronic devices.

Latest Patents

Yanning's latest patents showcase pioneering methods and devices aimed at enhancing semiconductor technology. His first notable invention is the **III-V transistor device with self-aligned doped bottom barrier**. This semiconductor device features a unique arrangement where a first layer of a substrate is arranged on a second layer. This second layer incorporates a doped III-V semiconductor material barrier layer, complemented by a gate stack on the channel region of the first layer and an epitaxially grown source/drain region. Such innovations contribute to greater efficiency and performance in electronic applications.

Another of his recent patents, titled **Low external resistance channels in III-V semiconductor devices**, introduces a method for forming a replacement channel composed of a III-V compound semiconductor material. This method involves strategically removing portions of a doped III-V compound semiconductor substrate to form the replacement channel, thereby improving the overall functionality of the semiconductor device.

Career Highlights

Throughout his career, Yanning Sun has made significant contributions while working at prestigious organizations. He has held key positions at International Business Machines Corporation (IBM) and Globalfoundries Inc., where he has played a vital role in researching and developing advanced semiconductor technologies. His extensive experience has equipped him with unique insights into the challenges and opportunities within the semiconductor industry.

Collaborations

Yanning Sun has collaborated with esteemed colleagues throughout his career, including notable professionals such as Cheng-Wei Cheng and Amlan Majumdar. These collaborations have fostered a productive exchange of ideas and expertise, further enhancing the impact of their joint research in semiconductor innovations.

Conclusion

Yanning Sun is a remarkable inventor whose advancements in semiconductor technology continue to influence the industry. With 44 patents under his belt, his latest innovations demonstrate a commitment to pushing the boundaries of what's possible in electronics. As the demand for high-performance semiconductor devices grows, Yanning’s work remains at the forefront, helping to pave the way for future innovations in technology.

This text is generated by artificial intelligence and may not be accurate.
Please report any incorrect information to [email protected]
Loading…