The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 17, 2017
Filed:
Mar. 18, 2016
International Business Machines Corporation, Armonk, NY (US);
Cheng-Wei Cheng, White Plains, NY (US);
Sanghoon Lee, Mohegan Lake, NY (US);
Effendi Leobandung, Stormville, NY (US);
Renee T. Mo, Yorktown Heights, NY (US);
Yanning Sun, Scarsdale, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A method is provided that may include providing a plurality of semiconductor pillars extending from a surface of a substrate, wherein a spacer is present on sidewall surfaces of each semiconductor pillar. A seed hole is then formed in a portion of each spacer that exposes a portion of at least one sidewall surface of each semiconductor pillar. Next, a semiconductor nanowire is epitaxially grown from the exposed portion of the at least one sidewall surface of each semiconductor pillar and entirely through each seed hole. A gate structure is then formed straddling over a channel portion of each semiconductor nanowire.